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Depósito Digital de Documentos de la UAB Encontrados 4 registros  La búsqueda tardó 0.02 segundos. 
1.
12 p, 1.6 MB Device-to-Materials Pathway for Electron Traps Detection in Amorphous GeSe-Based Selectors / Slassi, Amine (CNR-NANO Istituto Nanoscienze) ; Medondjio, Linda-Sheila (Institut Català de Nanociència i Nanotecnologia) ; Padovani, Andrea (University of Modena and Reggio Emilia) ; Tavanti, Francesco (CNR-NANO Istituto Nanoscienze) ; He, Xu (Institut Català de Nanociència i Nanotecnologia) ; Clima, Sergiu (IMEC) ; Garbin, Daniele (IMEC) ; Kaczer, Ben (IMEC) ; Larcher, Luca (Applied Materials Italia) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Calzolari, Arrigo (CNR-NANO Istituto Nanoscienze)
The choice of the ideal material employed in selector devices is a tough task both from the theoretical and experimental side, especially due to the lack of a synergistic approach between techniques able to correlate specific material properties with device characteristics. [...]
2023 - 10.1002/aelm.202201224
Advanced Electronic Materials, Vol. 9, Issue 4 (April 2023) , art. 2201224  
Registro completo - Creative Commons
2.
12 p, 2.8 MB Competition between Carrier Injection and Structural Distortions in Electron-Doped Perovskite Nickelate Thin Films / Hadjimichael, Marios (University of Geneva. Department of Quantum Matter Physics) ; Mundet, Bernat (École Polytechnique Fédérale de Lausanne) ; Domínguez, Claribel (University of Geneva. Department of Quantum Matter Physics) ; Waelchli, Adrien (University of Geneva. Department of Quantum Matter Physics) ; De Luca, Gabriele (Institut Català de Nanociència i Nanotecnologia) ; Spring, Jonathan (University of Zurich. Department of Physics) ; Jöhr, Simon (University of Zurich. Department of Physics) ; McKeown Walker, Siobhan (University of Geneva. Department of Quantum Matter Physics) ; Piamonteze, Cinthia (Paul Scherrer Institut (Suïssa)) ; Alexander, Duncan T. L. (École Polytechnique Fédérale de Lausanne) ; Triscone, Jean-Marc (University of Geneva. Department of Quantum Matter Physics) ; Gibert, Marta (Solid State Physics Institute. TU Wien)
The discovery of superconductivity in doped infinite-layer nickelate thin films has brought increased attention to the behavior of the doped perovskite phase. Despite this interest, the majority of existing studies pertain to hole-doped perovskite rare-earth nickelate thin films, while most electron-doping studies have been performed on bulk materials so far. [...]
2023 - 10.1002/aelm.202201182
Advanced Electronic Materials, Vol. 9, Issue 5 (May 2023) , art. 2201182  
Registro completo - Creative Commons
3.
8 p, 1.7 MB A Multilevel Magnetic Synapse Based on Voltage-Tuneable Magnetism by Nitrogen Ion Migration / Monalisha, P. (Universitat Autònoma de Barcelona. Departament de Física) ; Ma, Zheng (Universitat Autònoma de Barcelona. Departament de Física) ; Pellicer Vilà, Eva Maria (Universitat Autònoma de Barcelona. Departament de Física) ; Menéndez Dalmau, Enric (Universitat Autònoma de Barcelona. Departament de Física) ; Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
Advanced synaptic devices with simultaneous memory and processor capabilities are envisaged as core elements of neuromorphic computing (NC) for low-power artificial intelligence. So far, most synaptic devices are based on resistive memories, where the device resistance is tuned with applied voltage or current. [...]
2023 - 10.1002/aelm.202300249
Advanced Electronic Materials, Vol. 9, Issue 8 (August 2023) , art. 2300249  
Registro completo - Creative Commons
4.
9 p, 2.4 MB Effect of humidity on the writing speed and domain wall dynamics of ferroelectric domains / Spasojevic, Irena (Universitat Autònoma de Barcelona. Departament de Química) ; Verdaguer Prats, Albert (Institut de Ciència de Materials de Barcelona) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Domingo Marimon, Neus (Institut Català de Nanociència i Nanotecnologia)
The switching dynamics of ferroelectric polarization under electric fields depends on the availability of screening charges in order to stabilize the switched polarization. In ferroelectrics, thin films with exposed surfaces investigated by piezoresponse force microscopy (PFM), the main source of external screening charges is the atmosphere and the water neck, and therefore relative humidity (RH) plays a major role. [...]
2022 - 10.1002/aelm.202100650
Advanced Electronic Materials, Vol. 8, issue 6 (June 2022) , art. 2100650  
Registro completo - Creative Commons

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